Polysilicon pillar heat sinks for semiconductor on insulator cir

Details Polysilicon pillar heat sinks for semiconductor on insulator cir Polysilicon pillar heat sinks for semiconductor on insulator cir

1998-08-06

2000-06-27

Nelms, David

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438152, H01L 2100

Patent

active

060806087

ABSTRACT:
A heat sink is formed on a bonded semiconductor on insulator (SOI) wafer. A trench is formed which extends from a top of the bonded SOI wafer through an isolation region of the bonded SOI wafer to a base of the bonded SOI wafer. The base of the bonded SOI wafer is located below the isolation region of the bonded SOI wafer. A conductive pillar is formed in the trench. The conductive pillar extends from the top of the bonded SOI wafer through the isolation region of the bonded SOI wafer and is physically in contact with but electrically insulated from the base of the bonded SOI wafer. In the preferred embodiment, the conductive pillar is formed of doped polysilicon. The doped polysilicon is of a conductivity type which is different than the conductivity type of the base. Out-diffusion from the doped polysilicon forms a region within the base which electrically insulates the conductive pillar from the base.

REFERENCES:
patent: 5698869 (1997-12-01), Yoshimi et al.
patent: 5736435 (1998-04-01), Venkatesan et al.
patent: 5849612 (1998-12-01), Takahashi et al.
patent: 5872029 (1999-02-01), Gardner et al.
patent: 5872044 (1999-12-01), Hemmenway et al.

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