Polysilicon pillar heat sinks for semiconductor on insulator cir

Details Polysilicon pillar heat sinks for semiconductor on insulator cir Polysilicon pillar heat sinks for semiconductor on insulator cir

1993-10-29

1998-08-11

Ostrowski, David

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With provision for cooling the housing or its contents

257713, 257347, H01L 2334

Patent

active

057931070

ABSTRACT:
A heat sink is formed on a bonded semiconductor on insulator (SOI) wafer. A trench is formed which extends from a top of the bonded SOI wafer through an isolation region of the bonded SOI wafer to a base of the bonded SOI wafer. The base of the bonded SOI wafer is located below the isolation region of the bonded SOI wafer. A conductive pillar is formed in the trench. The conductive pillar extends from the top of the bonded SOI wafer through the isolation region of the bonded SOI wafer and is physically in contact with but electrically insulated from the base of the bonded SOI wafer. In the preferred embodiment, the conductive pillar is formed of doped polysilicon. The doped polysilicon is of a conductivity type which is different than the conductivity type of the base. Out-diffusion from the doped polysilicon forms a region within the base which electrically insulates the conductive pillar from the base.

REFERENCES:
patent: 4949148 (1990-08-01), Bartelink
patent: 5111260 (1992-05-01), Malhi et al.
patent: 5241211 (1993-08-01), Tashiro
patent: 5292670 (1994-03-01), Sundaresan
patent: 5312782 (1994-05-01), Miyazawa
AcuThin Wafer Specifications, Hughes Danbury Optical Systems, Inc. Precision Materials Operations, 100 Wooster Heights Road, Danbury, Connecticut 06810-7589.
Laura Peters, SOI Takes Over Where Silicon Leaves Off,Semiconductor International, Mar. 1993, pp. 48-51..
H.H. Hosack, Recent Progress in SOI Materials For the Next Generation of IC Technology,The Electrochemical Society Interface, Spring 1993, pp. 51-57.

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