Patent
1988-01-21
1989-04-11
Carroll, J.
357 4, 357 59, 357 91, H01L 2714, H01L 2712, H01L 2904
Patent
active
048210919
ABSTRACT:
A photoconductive element of polycrystalline silicon is provided with intrinsic response time which does not limit overall circuit response. An undoped polycrystalline silicon layer is deposited by LPCVD to a selected thickness on silicon dioxide. The deposited polycrystalline silicon is then annealed at a selected temperature and for a time effective to obtain crystal sizes effective to produce an enhanced current output. The annealed polycrystalline layer is subsequently exposed and damaged by ion implantation to a damage factor effective to obtain a fast photoconductive response.
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Bowman Douglas R.
Hammond Robert B.
Carroll J.
Cordovana Richard J.
Gaetjens Paul D.
Hightower Judson R.
Ngo Ngan V.
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