Polysilicon opening polish

Details Polysilicon opening polish Polysilicon opening polish

2006-12-05

2006-12-05

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S626000, C438S630000, C438S691000

Reexamination Certificate

active

07144816

ABSTRACT:
Fabricating a semiconductor structure includes providing a semiconductor substrate, forming a silicide layer over the substrate, and removing a portion of the silicide layer by chemical mechanical polishing. The fabrication of the structure can also include forming a dielectric layer after forming the silicide layer, and removing a portion of the dielectric layer by chemical mechanical polishing before removing the portion of the silicide layer.

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