Polysilicon material and semiconductor devices formed therefrom

Details Polysilicon material and semiconductor devices formed therefrom Polysilicon material and semiconductor devices formed therefrom

2005-10-11

2005-10-11

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S486000, C438S487000

Reexamination Certificate

active

06953716

ABSTRACT:
A metal induced lateral crystallization (MILC) poly-silicon material is produced by depositing a metal in a predefined pattern on amorphous silicon, and heat treating the silicon at a first temperature to form a MILC poly-Si material. The MILC poly-Si material is further heat treated at a second temperature higher than the first temperature to induce recrystallization. The second high temperature recrystallization step significantly enhances the material structure, and in particular the grain structure, of the poly-Si material with substantial benefits to the performance of semiconductor devices made therefrom.

REFERENCES:
patent: 4409724 (1983-10-01), Tasch et al.
patent: 5804473 (1998-09-01), Takizawa
patent: 5923997 (1999-07-01), Mitanaga et al.
patent: 6228693 (2001-05-01), Maekawa et al.
patent: 6361912 (2002-03-01), Fonash et al.

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