Polysilicon gate electrode critical dimension and drive current

Details Polysilicon gate electrode critical dimension and drive current Polysilicon gate electrode critical dimension and drive current

1998-11-20

2000-09-05

Chaudhari, Chandra

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438488, 438684, H01L 2120, H01L 2136, H01L 213205, H01L 214763, H01L 2144

Patent

active

061142298

ABSTRACT:
A method is provided for controlling the critical dimensions of a polysilicon gate electrode, and for improving transistor drive current control. The method involves subjecting the gate structure of a transistor to a thermal treatment process in the presence of hydrogen gas. The thermal treatment process is performed subsequent to gate etching and photoresist mask removal, and provides gate electrodes having a more homogeneous linewidth, thereby improving transistor performance.

REFERENCES:
patent: 5663090 (1997-09-01), Dennison
patent: 5843812 (1998-12-01), Hwang
patent: 6037233 (2000-03-01), Liu
Tsutomo Sato et al., "Trench Transformation Technology using Hydrogen Annealing for Realizing Highly Reliable Device Structure with Thin Dielectric Films" 1998 Symposium on VLSI Technologies; Honolulu, Hawaii, Jun. 9-11, 1998.

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