Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-12-22
2011-10-11
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000, C438S151000, C438S155000, C438S482000, C257S062000, C257S064000, C257S066000, C257SE51005
Reexamination Certificate
active
08034671
ABSTRACT:
A crystallizing method for forming a poly-Si film is described as follows. First, forming an activated layer on a substrate, and the molecule structure of the activated layer includes carbon, hydrogen, oxygen and silicon. And then, forming an amorphous silicon film on the activated layer. Finally, performing an annealing process to crystallize the amorphous silicon film and transform it into a poly-Si film.
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Shih-Ya Wu, Process Integation of Low-K Material with E-beam Lithography, pp. 1-3.
Chang Chih-Hsiung
Peng Chia-Tien
Au Optronics Corp.
Birch & Stewart Kolasch & Birch, LLP
Garcia Joannie A
Richards N Drew
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