Polysilicon film, thin film transistor using the same, and...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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Details

C438S149000, C438S151000, C438S155000, C438S482000, C257S062000, C257S064000, C257S066000, C257SE51005

Reexamination Certificate

active

08034671

ABSTRACT:
A crystallizing method for forming a poly-Si film is described as follows. First, forming an activated layer on a substrate, and the molecule structure of the activated layer includes carbon, hydrogen, oxygen and silicon. And then, forming an amorphous silicon film on the activated layer. Finally, performing an annealing process to crystallize the amorphous silicon film and transform it into a poly-Si film.

REFERENCES:
patent: 6093586 (2000-07-01), Gosain et al.
patent: 6201279 (2001-03-01), Pfirsch
patent: 2002/0110964 (2002-08-01), Cheng et al.
patent: 2002/0123218 (2002-09-01), Shioya et al.
patent: 2002/0160622 (2002-10-01), Yamazaki et al.
patent: 2003/0127709 (2003-07-01), Lippmann et al.
patent: 2003/0148565 (2003-08-01), Yamanaka
patent: 2003/0155572 (2003-08-01), Han et al.
patent: 2003/0174275 (2003-09-01), Asano et al.
patent: 2004/0058076 (2004-03-01), Peng
patent: 2004/0121529 (2004-06-01), Sohn et al.
patent: 2004/0127032 (2004-07-01), Peng et al.
patent: 2004/0140468 (2004-07-01), Liao et al.
patent: 2004/0175870 (2004-09-01), Peng et al.
patent: 2004/0197968 (2004-10-01), Peng et al.
patent: 2004/0219723 (2004-11-01), Peng et al.
patent: 2005/0003568 (2005-01-01), Yamazaki et al.
patent: 2005/0127818 (2005-06-01), Ohtani
patent: 2005/0161659 (2005-07-01), Bakkers
patent: 2005/0236357 (2005-10-01), Bakkers et al.
patent: 2006/0234151 (2006-10-01), Nakagawa et al.
patent: 2001-274087 (2001-10-01), None
patent: 501286 (2002-09-01), None
Shih-Ya Wu, Process Integation of Low-K Material with E-beam Lithography, pp. 1-3.

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