Polysilicon film, thin film transistor using the same, and...

Details Polysilicon film, thin film transistor using the same, and... Polysilicon film, thin film transistor using the same, and...

2005-12-22

2011-10-11

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C438S151000, C438S155000, C438S482000, C257S062000, C257S064000, C257S066000, C257SE51005

Reexamination Certificate

active

08034671

ABSTRACT:
A crystallizing method for forming a poly-Si film is described as follows. First, forming an activated layer on a substrate, and the molecule structure of the activated layer includes carbon, hydrogen, oxygen and silicon. And then, forming an amorphous silicon film on the activated layer. Finally, performing an annealing process to crystallize the amorphous silicon film and transform it into a poly-Si film.

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Shih-Ya Wu, Process Integation of Low-K Material with E-beam Lithography, pp. 1-3.

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