Polysilicon filled trench isolation structure for soi integrated

Details Polysilicon filled trench isolation structure for soi integrated Polysilicon filled trench isolation structure for soi integrated

1997-04-23

2000-08-01

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438406, H01L 2176

Patent

active

060966211

ABSTRACT:
A method for dissipating accumulated charge in a trench isolation structure, comprising the steps of: etching the trench region into a silicon substrate; forming an insulating region on the sidewalls of the trench and the base of the trench; removing the insulator at the bottom of the trench; and filling the trench with polysilicon, the polysilicon engaging the second layer of silicon below the insulator layer.

REFERENCES:
patent: 4638552 (1987-01-01), Shimbo et al.
patent: 4968628 (1990-11-01), Delgado et al.
patent: 5270265 (1993-12-01), Hemmenway et al.
patent: 5445988 (1995-08-01), Schwalke
patent: 5569621 (1996-10-01), Yallup et al.

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