Polysilicon field ring structure for power IC

Details Polysilicon field ring structure for power IC Polysilicon field ring structure for power IC

1996-06-10

1997-11-11

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

Field relief electrode

257372, 257409, 257500, 257501, H01L 2976, H01L 2358, H01L 2900

Patent

active

056867549

ABSTRACT:
A polysilicon field ring structure is used to eliminate any type of unwanted surface current leakage in an integrated power chip having high voltage and low voltage areas and enclosed in a plastic housing. All P-type diffusions not biased to the ground potential are surrounded by rings biased to the supply potential, and all N-type diffusions not biased to the supply potential are surrounded by rings biased to the ground potential.

REFERENCES:
patent: 4000507 (1976-12-01), Nishida et al.
patent: 4900693 (1990-02-01), Manning
patent: 4937756 (1990-06-01), Hsu et al.
patent: 5187552 (1993-02-01), Hendrickson et al.
patent: 5223735 (1993-06-01), Kinoshita et al.
patent: 5374843 (1994-12-01), Williams et al.
Lin et al., "Shielded Silicon Gate Complementary MOS Integrated Circuit", IEEE Transactions on Electron Devices, vol. 19, No. 11, Nov. 1972, pp. 1199-1206.
WPI Abstract Accession No. 87-196771/28 and RD 278011 (ANON), 10 Jun. 1987.

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