Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-08-23
2005-08-23
Weiss, Howard (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S158000, C438S487000
Reexamination Certificate
active
06933185
ABSTRACT:
The state of a polysilicon film formed by excimer laser annealing an amorphous silicon film is to be evaluated. When the amorphous silicon film is annealed to form a polysilicon film, linearity or periodicity presents itself in the spatial structure of the film surface of the polysilicon film formed depending on the energy applied to the amorphous silicon during annealing. This linearity or periodicity is processed as an image and represented numerically from the image by exploiting the linearity or periodicity. The state of the polysilicon film is checked based on the numerical results.
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European search report, regarding EP 01 10 0258, mailed Sep. 7, 2004.
Abe Tetsuo
Hattori Tadashi
Hirata Yoshimi
Kubota Shigeo
Ooshima Akifumi
Pizarro Marcos D.
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
Weiss Howard
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