Polysilicon etching method

Details Polysilicon etching method Polysilicon etching method

1993-02-25

1994-08-09

Quach, T. N.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156653, 156657, H01L 21302

Patent

active

053363655

ABSTRACT:
A method of etching a polysilicon film specimen by an electronic cyclotron resonance etching technique or a microwave plasma etching technique includes the first process in which a mixed gas containing Cl.sub.2 and HBr is used as a process gas for etching, the Cl.sub.2 occupying 50-70 vol. % of the whole mixed gas; and the second process in which a mixed gas containing HBr and He is used, with HBr being in a proportion of 20-50 vol. % of the mixed gas, and a low bias voltage from -100 to -30 volts is applied to a specimen carrier. Further, in the first and second processes, a mixed gas containing HBr and He is used, with HBr being in a proportion of 20-50 vol. %, and a relatively high bias voltage from -250 to -100 volts is applied to the specimen carrier in the first process, while a low bias voltage from -100 to -30 volts is applied to the same in the second process. According to the present invention, a polysilicon film can be etched without causing undercut and with high dimensional accuracy.

REFERENCES:
patent: 4349409 (1982-09-01), Shibayana et al.
patent: 4468285 (1984-08-01), Bayman et al.
patent: 4799991 (1989-01-01), Dockery
patent: 5013398 (1991-05-01), Long et al.
patent: 5030590 (1991-07-01), Amini et al.
patent: 5094712 (1992-03-01), Becker et al.
patent: 5147499 (1992-09-01), Szwejkowski et al.
patent: 5160407 (1992-11-01), Latchford et al.

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