Polysilicon dummy wafers and process used therewith

Details Polysilicon dummy wafers and process used therewith Polysilicon dummy wafers and process used therewith

2007-12-18

2009-11-03

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S657000, C438S753000, C257SE21170, C257SE21054, C257SE21227, C257SE21237, C257SE21278, C257SE21293, C257SE21483

Reexamination Certificate

active

07611989

ABSTRACT:
Non-production wafers of polycrystalline silicon are placed in non-production slots of a support tower for thermal processing monocrystalline silicon wafers. They may have thicknesses of 0.725 to 2 mm and be roughened on both sides. Nitride may be grown on the non-production wafers to a thickness of over 2 μm without flaking. The polycrystalline silicon is preferably randomly oriented Czochralski polysilicon grown using a randomly oriented seed, for example, CVD grown silicon. Both sides are ground to introduce sub-surface damage and then oxidized and etch cleaned. An all-silicon hot zone of a thermal furnace, for example, depositing a nitride layer, may include a silicon support tower placed within a silicon liner and supporting the polysilicon non-production wafers with silicon injector tube providing processing gas within the liner.

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