Polysilicon crystallizing method, method of fabricating thin...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S488000

Reexamination Certificate

active

10189770

ABSTRACT:
A method of crystallizing polysilicon, a method of fabricating a thin film transistor using the same, and a method of fabricating a liquid crystal display thereof form a polysilicon layer having uniformly oriented crystalline grains with high quality. A polysilicon crystallizing method includes forming a polysilicon layer on a substrate, making grains of the polysilicon layer amorphous except a portion of the grains having specific orientation, and crystallizing the polysilicon layer using the grains having the specific orientation.

REFERENCES:
patent: 4385937 (1983-05-01), Ohmura
patent: 4500388 (1985-02-01), Ohmura et al.
patent: 4693759 (1987-09-01), Noguchi et al.
patent: 5221630 (1993-06-01), Koyama et al.
patent: 5234843 (1993-08-01), Oyoshi et al.
patent: 5290712 (1994-03-01), Sato et al.
patent: 5318661 (1994-06-01), Kumomi
patent: 5336335 (1994-08-01), Hall et al.
patent: 5381032 (1995-01-01), Kokawa et al.
patent: 5403756 (1995-04-01), Yoshinouchi et al.
patent: 5495824 (1996-03-01), Yonehara et al.
patent: 5627086 (1997-05-01), Noguchi
patent: 5681759 (1997-10-01), Zhang
patent: 5736438 (1998-04-01), Nishimura et al.
patent: 5753544 (1998-05-01), Cho et al.
patent: 5830784 (1998-11-01), Zhang et al.
patent: 5885884 (1999-03-01), Jan et al.
patent: 5932893 (1999-08-01), Miyanaga et al.
patent: 5970368 (1999-10-01), Sasaki et al.
patent: 6017781 (2000-01-01), Shimizu et al.
patent: 6249327 (2001-06-01), Murade et al.
patent: 6338987 (2002-01-01), Yi et al.
patent: 6383899 (2002-05-01), Voutsas
patent: 8-330602 (1996-12-01), None
patent: 9-186336 (1997-07-01), None
patent: 2002-368013 (2002-12-01), None
patent: WO 02/103806 (2002-12-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Polysilicon crystallizing method, method of fabricating thin... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polysilicon crystallizing method, method of fabricating thin..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polysilicon crystallizing method, method of fabricating thin... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3844625

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.