Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2007-02-06
2007-02-06
Malsawma, Lex H. (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S488000
Reexamination Certificate
active
10189770
ABSTRACT:
A method of crystallizing polysilicon, a method of fabricating a thin film transistor using the same, and a method of fabricating a liquid crystal display thereof form a polysilicon layer having uniformly oriented crystalline grains with high quality. A polysilicon crystallizing method includes forming a polysilicon layer on a substrate, making grains of the polysilicon layer amorphous except a portion of the grains having specific orientation, and crystallizing the polysilicon layer using the grains having the specific orientation.
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LG.Philips LCD Co. , Ltd.
Malsawma Lex H.
McKenna Long & Aldridge LLP
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