Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-19
2011-04-19
Bryant, Kiesha R (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S622000, C257SE21530, C257SE21585
Reexamination Certificate
active
07928507
ABSTRACT:
This invention discloses a semiconductor wafer for manufacturing electronic circuit thereon. The semiconductor substrate further includes an etch-back indicator that includes trenches of different sizes having polysilicon filled in the trenches and then completely removed from some of the trenches of greater planar trench dimensions and the polysilicon still remaining in a bottom portion in some of the trenches having smaller planar trench dimensions.
REFERENCES:
patent: 2005/0173777 (2005-08-01), Grivna
Chang Hong
Li Tiesheng
Tai Sung-Shan
Wang Yu
Alpha & Omega Semiconductor, Inc.
Bo-In Lin
Bryant Kiesha R
Wright Tucker
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