Polysilicon control etch-back indicator

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S622000, C257SE21530, C257SE21585

Reexamination Certificate

active

07928507

ABSTRACT:
This invention discloses a semiconductor wafer for manufacturing electronic circuit thereon. The semiconductor substrate further includes an etch-back indicator that includes trenches of different sizes having polysilicon filled in the trenches and then completely removed from some of the trenches of greater planar trench dimensions and the polysilicon still remaining in a bottom portion in some of the trenches having smaller planar trench dimensions.

REFERENCES:
patent: 2005/0173777 (2005-08-01), Grivna

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