Polyoxometallates in memory devices

Details Polyoxometallates in memory devices Polyoxometallates in memory devices

2006-08-02

2010-11-09

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21209, C257SE21646, C257SE27084, C257SE29302, C257SE29309, C257S316000, C257S317000, C257S314000, C257S315000

Reexamination Certificate

active

07829927

ABSTRACT:
The invention relates to a DRAM memory device with a capacity associated with a field effect transistor, in which all or some of the molecules capable of storing the loads comprising a polyoxometallate are incorporated into the capacity, or a flash-type memory using at least one field effect transistor, in which the molecules capable of storing the loads comprising a polyoxometallate are incorporated into the floating grid of the transistor. The invention also relates to a method for producing on such device and to an electronic appliance comprising one such memory device.

REFERENCES:
patent: 4816749 (1989-03-01), Schmidtpott et al.
patent: 5548052 (1996-08-01), Katsoulis et al.
patent: 5563016 (1996-10-01), Baur et al.
patent: 7579242 (2009-08-01), Bhattacharyya
patent: 2003/0027052 (2003-02-01), Huang et al.
patent: 2003/0040197 (2003-02-01), Cho
patent: 2003/0111670 (2003-06-01), Misra et al.
patent: 2005/0162895 (2005-07-01), Kuhr et al.
IEEE ElectronDevice Letter, © 2000, B. Eitan et al., vol. 21: Issue 11: pp. 543-545.
Judenstein et al., Advanced Materials for Optics and Electronics, © 1997, vol. 7, pp. 123-133.
Angew. Che, Int. Ed. © 2005: 44, pp. 1254-1257.
C. Mayer, et al. Chemical Materials © 2000: vol. 12, pp. 257-260.
B. Phillips, Vac. Sci, Technologies A , © 1983, A1 646.
International Technology Roadmap for Semiconductors © 2004 (ITRS 2004) (http://www.itrs.net/common/2004—udpdate/2004update.html).
IEEE Non-Volatile Semiconductor Memo Workshop, M. Sadd et al., © 2003, p. 71.
Applied Physics Letters, Li et al., © 2004 vol. 84: pp. 1949-1951.
Ganguly et al., Mat.Res.Soc.Symp.Proc., ©2004 vol. 789: pp. 403-405.
A. Yasseri et al., J. American Chemical Society, © 2004 vol. 126: pp. 15603-15612.
Q. Li et al., Advanced Materials, © 2004 vol. 16: pp. 133-137.
Q. Li et al., Journal of Physical Chemistry, © 2004, vol. 108: pp. 9646-9648.
Kuhr et al., MRS Bulletin, © 2004 vol. 11, pp. 838-842.
Kuhn et al., J. of Electroanalytical Chemistry, © 1999, pp. 187-194.
G. Bidan et al., Journal of Electroana. Chem., vol. 251 © 1988: pp. 297-306.
E. Coronado and C. Mingotaud, Langmuir-Blodgett Films, Advanced Materials.
G. Decher, et al., Science, vol. 277, © 1997, pp. 1232-1237.
S. Liu, et al., Journal of American Chemical Society, © 2002, vol. 124, pp. 12279-12287.
D. Ingersoll et al., J. Electrochem, Soc., Vo. 141, No. 1, © 1994, pp. 141-146.
L. Cheng and S. Dong Electrochemistry Communications 1, © 1999, pp. 159-162.
S. Bareyt et al., J. American Chemical Society, © 2005, vol. 127, pp. 6788-6794.
T. McCormac, et al., Journal Electroanalytical Chemistry 425, © 1997, pp. 49-54.
B. Keita et al., J. Electroanalytic Chemistry, © 1988, 247, 157.
Glezos et al., Applied physics letters, Vo. 83, No. 3, © 2003, pp. 488-490.
Liu et al. Advanced Materials, vol. 14, No. 3, © 2002 pp. 225-228.
Bai et al., Advanced Materials, vol. 14, No. 21 © 2002, pp. 1546-1549.
Clemente-Leon et al., Elsevier Science, vol. 327-329, © 1998, pp. 439-442.
Chaidogiannos et al., Elsevier, vol. 73-74, © 2004, pp. 746-751.

Affiliated with

Also associated with

Rating

Polyoxometallates in memory devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polyoxometallates in memory devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polyoxometallates in memory devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4205321