Polymethyl methacrylate compatible silicon dioxide complexing ag

Details Polymethyl methacrylate compatible silicon dioxide complexing ag Polymethyl methacrylate compatible silicon dioxide complexing ag

1984-03-08

1985-04-02

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156653, 156657, 1566611, 156662, 252 793, 252 794, B44C 122, C03C 1500, C03C 2506

Patent

active

045085919

ABSTRACT:
An etching solution for the dissolution of silicon dioxide through a portable conformable mask, with PMMA as the etch stop layer, has been developed which eliminates resist lifting and non-uniform lateral etching, thereby providing the improved oxide edge definitions required for 1 micron line geometries in VLSI chips.

REFERENCES:
patent: 4362809 (1982-12-01), Chen
patent: 4395304 (1983-07-01), Kern et al.
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"Chemical Etching of Silicon II. The System HF, HNO.sub.3, H.sub.2 O, and HC.sub.2 H.sub.3 O.sub.2 ", H. Robbins and B. Schwartz, J. Electrochem. Soc., vol. 107, p. 108, (1960).
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"Chemical Etching of Silicon III. A Temperature Study in the Acid System", B. Schwartz and H. Robbins, J. Electrochem. Soc., vol. 108, p. 365, (1961).

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