Polymeric particle slurry system and method to reduce...

Details Polymeric particle slurry system and method to reduce... Polymeric particle slurry system and method to reduce...

2003-04-24

2008-08-05

Goudreau, George A. (Department: 1792)

Compositions

Etching or brightening compositions

C252S079200, C252S079300, C252S079400, C252S079500

Reexamination Certificate

active

07407601

ABSTRACT:
A slurry system for a chemical mechanical polishing (CMP) process and a method for using the same wherein the slurry system includes an aqueous dispersion comprising at least abrasive polymer containing particles in an alkaline solution having a pH of less than about 9.5; and wherein the method includes providing a semiconductor wafer process surface including a oxide containing material and metal filled semiconductor features; providing the system; and, polishing in a CMP process the semiconductor wafer process surface using the slurry system to remove at least a portion of the oxide containing material and the metal comprising the metal filled semiconductor features.

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Principles of Polymerization; 2nd ed.; George Odian; John Wiley & Sons; 19811; NY,NY; pp. 35, 399.

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