Polymer compound, resist material and pattern formation method

Details Polymer compound, resist material and pattern formation method Polymer compound, resist material and pattern formation method

2007-01-30

2007-01-30

Lee, Sin (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S325000, C430S326000, C430S311000, C430S905000, C430S907000, C430S914000, C430S945000, C430S966000, C526S288000

Reexamination Certificate

active

10954374

ABSTRACT:
The base polymer of a resist material contains a polymer compound including a first unit represented by a general formula of the following Chemical Formula 4 and a second unit represented by a general formula of the following Chemical Formula 5:wherein R1, R2and R3are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5and R6are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; R7is a methylene group, an oxygen atom, a sulfur atom or —SO2—; R8, R9, R10and R11are the same or different and are a hydrogen atom, a fluorine atom, a hydroxyl group, —OR13, CO2R13, —R2—OR13or —R12—CO2R13, at least one of R8, R9, R10and R11including —OR13, —CO2R13, —R12—OR13or —R12—CO2R13(wherein R 2 is a straight-chain alkylene group, a branched or cyclic alkylene group or a fluoridated alkylene group with a carbon number not less than 1 and not more than 20 and R13is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid); 0<a<1; 0<b<1; and c is 0 or 1.

REFERENCES:
patent: 4491628 (1985-01-01), Ito et al.
patent: 5310619 (1994-05-01), Crivello et al.
patent: 5362607 (1994-11-01), Crivello et al.
patent: 6841333 (2005-01-01), Lamanna et al.
patent: 2005/0147915 (2005-07-01), Dammel
patent: 57-153433 (1982-09-01), None
patent: 63-27829 (1988-02-01), None
patent: 2-27660 (1990-06-01), None
patent: 9-73173 (1997-03-01), None
patent: 9-227330 (1997-09-01), None
patent: 9-230595 (1997-09-01), None
patent: 10-10739 (1998-01-01), None
patent: 2000-33028 (2000-02-01), None
patent: 2000-330289 (2000-11-01), None
patent: 2002-250215 (2002-09-01), None
patent: 2003-270789 (2003-09-01), None
patent: 2004-83873 (2004-03-01), None
patent: WO 97/33198 (1997-09-01), None
patent: WO 98/14831 (1998-04-01), None
patent: WO 99/49504 (1999-09-01), None
Fujigaya, T. et al., “A New Photoresist Material for 157 nm Lithography-2”, Journal of Photopolymer Science and Technology, vol. 15, No. 4, pp. 643-654, 2002.
Fujigaya, Tsuyohiko et al., “New Photoresist Materials for 157-nm Lithography”, Chemistry of Materials, vol. 15, No. 7, pp. 1512-1517, 2003.
Iimori, H. et al., “A New Photoresist Materials for 157nm Lithograhpy-3”, Journal of Photopolymer Science and Technology, vol. 16, No. 4, pp. 601-605, 2003.
Japanese Office Action issued in corresponding Japanese Patent Application No. 2004-278183, Dated Aug. 22, 2006.

Affiliated with

Also associated with

Rating

Polymer compound, resist material and pattern formation method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polymer compound, resist material and pattern formation method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polymer compound, resist material and pattern formation method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3786048