Polyimide precursor and photosensitive composition containing th

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

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430286, 430287, 522142, 522164, 528353, G03F 7038, C08G 7312

Patent

active

053976827

DESCRIPTION:

BRIEF SUMMARY
TECHNICAL FIELD

The present invention relates to a polyimide precursor. More particularly, the present invention is concerned with a novel polyimide precursor having an aromatic polyamide ester structure containing amido groups and carboxylic acid ester groups composed of carboxylic groups and organic groups bonded thereto by ester linkage. The ester groups of the polyimide precursor are essentially of two types, depending on the structure of the organic group of the ester group, and their distribution in the polymer chain is characteristic of the polyimide precursor. The polyimide precursor of the present invention has excellent pattern-forming properties and can be converted by heating to a cured polyimide resin having excellent mechanical properties including high elongation properties, and is therefore useful as a raw material for the production of electrical and electronic parts, such as semiconductor devices, multilayer wiring boards, etc. The present invention is also concerned with a photosensitive resin composition containing this novel polyimide precursor, which is particularly useful for forming a patterned polyimide resin film having excellent mechanical properties and a high water resistance as well as a high pattern resolution.


BACKGROUND ART

Polyimide resins have excellent thermal and chemical stabilities, low dielectric constants, and excellent planar contour-forming ability and, thus, have been attracting attention in the microelectronics industries. Polyimide resins have been widely used as materials for a surface-protective film or an interlayer insulating film for semiconductor devices, or as materials for multichip modules.
Generally, the process for forming a polyimide coating film in a desired pattern, for example, on a semiconductor device, is complicated. The process includes the steps of half-curing a polyimide precursor applied on, for example, a semiconductor device by heating, forming a pattern of a photoresist on the half-cured polyimide coating film, etching the polyimide coating film using the photoresist pattern as a mask, subsequently peeling-off the used photoresist pattern on the polyimide coating film, and subjecting the polyimide coating film on the semiconductor device again to heat treatment for imparting desired physical properties to the polyimide coating film. In such a complicated process, setting and controlling of various conditions for each step are difficult to perform satisfactorily, so that reproducibility is likely to be poor with respect to the physical properties of the resultant coating films. Further, the process has other drawbacks in that the pattern resolution is unsatisfactory because of indirect patterning, and that a hazardous substance, such as hydrazine, is used in the etching step.
Therefore, in recent years, for obtaining a pattern of a polyimide coating film, a method has been proposed, in which a polyimide precursor containing a photopolymerizable functional group is used. This method comprises forming a coating of a photosensitive composition containing the above polyimide precursor, a photopolymerization initiator, etc., photo-curing the formed coating, subjecting the photo-cured coating to developing to obtain a pattern coating, and then heating the pattern coating to convert the polyimide precursor to a polyimide resin. The polyimide precursor used in such a technique is generally referred to as "photosensitive polyimide precursor". The technique is described in detail in R. Rubner, H. Ahne, E. Kehn and G. Kolodziej, Photographic Science and Engineering, Vol. 23, No. 5, 303 (1979). By employing this technique, the drawbacks in the above-mentioned conventional process using a non-photosensitive polyimide precursor polymer have been overcome. Therefore, employment of this technique in obtaining patterns of polyimide coating films has been increasing.
Recently, however, demands for higher resolution in patterning a polyimide on a semiconductor device or the like have increased. In conventional processes using a non-photosensitive polyi

REFERENCES:
patent: 4548891 (1985-10-01), Riediker
patent: 5310625 (1994-05-01), Angelopoulos

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