Polyimide as a mask in vapor hydrogen fluoride etching and metho

Details Polyimide as a mask in vapor hydrogen fluoride etching and metho Polyimide as a mask in vapor hydrogen fluoride etching and metho

1996-12-23

2000-11-28

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430319, 216 41, 216 72, G03F 700

Patent

active

061533580

ABSTRACT:
A layer of polyimide or polysilicon is used as a mask in vapor hydrogen fluoride etching. Both non-photosensitive and photosensitive type polyimide may be use. A non-photosensitive polyimide mask requires the use of photoresist for patterning with a lithographic mask. Alternatively, photosensitive type polyimide may be patterned directly with the use of a lithographic mask. The resulting polyimide mask enables the etching of very small features with great uniformity. Such etching may be used to expose micropoint emitters of field emission devices.

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Ma, Y. et al., J. Vac. Sci, Technol, B 13(4), Jul./Aug. 1996, "Vapor phase SIO.sub.2 etching and metallic contaminiation removal in an intergrated cluster system", pp. 1460-1465.
Munoz, J., et al., J. Vac. Sci. Technol, B 13(6), Nov./Dec. 1995, "Dry development of photosensitive polyimides for high resolution and aspect ratio applications", pp. 2179-2183.
"The Right Tool for Polyimide Processes", Copyright 1995 Ultrtech Stepper.

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