Polyimide as a mask in vapor hydrogen fluoride etching

Details Polyimide as a mask in vapor hydrogen fluoride etching Polyimide as a mask in vapor hydrogen fluoride etching

2006-10-31

2006-10-31

Young, Christopher G. (Department: 1756)

Etching a substrate: processes

Etching of semiconductor material to produce an article...

C216S041000, C216S042000, C216S049000, C216S058000, C216S063000, C216S067000, C430S313000

Reexamination Certificate

active

07128842

ABSTRACT:
A layer of polyimide or polysilicon is used as a mask in vapor hydrogen fluoride etching. Both non-photosensitive and photosensitive type polyimide may be used. A non-photosensitive polyimide mask requires the use of photoresist for patterning with a lithographic mask. Alternatively, photosensitive type polyimide may be patterned directly with the use of a lithographic mask. The resulting polyimide mask enables the etching of very small features with great uniformity. Such etching may be used to expose micropoint emitters of field emission devices.

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