Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-01-09
2007-01-09
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000, C438S151000, C438S158000
Reexamination Certificate
active
10487170
ABSTRACT:
Methods of making a polycrystalline silicon thin-film transistor having a uniform microstructure. One exemplary method requires receiving a polycrystalline silicon thin film having a grain structure which is periodic in at least a first direction, and placing at least portions (410, 420) of one or more thin-film transistors on the received film such that they are tilted relative to the periodic structure of the thin film.
REFERENCES:
patent: 3632205 (1972-01-01), Marcy
patent: 4234358 (1980-11-01), Celler et al.
patent: 4309225 (1982-01-01), Fan et al.
patent: 4382658 (1983-05-01), Shields et al.
patent: 4456371 (1984-06-01), Lin
patent: 4639277 (1987-01-01), Hawkins
patent: 4691983 (1987-09-01), Kobayashi et al.
patent: 4727047 (1988-02-01), Bolzer et al.
patent: 4758533 (1988-07-01), Magee et al.
patent: 4793694 (1988-12-01), Liu
patent: 4800179 (1989-01-01), Mukai
patent: 4855014 (1989-08-01), Kakimoto et al.
patent: 4870031 (1989-09-01), Suguhara et al.
patent: 4940505 (1990-07-01), Schachameyer et al.
patent: 4970546 (1990-11-01), Suzuki et al.
patent: 4977104 (1990-12-01), Sawada et al.
patent: 5032233 (1991-07-01), Yu et al.
patent: 5061655 (1991-10-01), Ipposhi et al.
patent: RE33836 (1992-03-01), Resor, III et al.
patent: 5145808 (1992-09-01), Sameshima et al.
patent: 5204659 (1993-04-01), Sarma
patent: 5233207 (1993-08-01), Anzai
patent: 5285236 (1994-02-01), Jain
patent: 5291240 (1994-03-01), Jain
patent: 5304357 (1994-04-01), Sato et al.
patent: 5373803 (1994-12-01), Noguchi et al.
patent: 5395481 (1995-03-01), McCarthy
patent: 5409867 (1995-04-01), Asano
patent: 5453594 (1995-09-01), Konecny
patent: 5456763 (1995-10-01), Kaschmitter et al.
patent: 5496768 (1996-03-01), Kudo
patent: 5523193 (1996-06-01), Nelson
patent: 5529951 (1996-06-01), Noguchi et al.
patent: 5534716 (1996-07-01), Takemura
patent: 5591668 (1997-01-01), Maegawa et al.
patent: 5614426 (1997-03-01), Funada et al.
patent: 5616506 (1997-04-01), Takemura
patent: 5696388 (1997-12-01), Funada et al.
patent: 5721606 (1998-02-01), Jain
patent: 5742426 (1998-04-01), York
patent: 5756364 (1998-05-01), Tanaka et al.
patent: 5766989 (1998-06-01), Maegawa et al.
patent: 5844588 (1998-12-01), Anderson
patent: 5861991 (1999-01-01), Fork
patent: 5893990 (1999-04-01), Tanaka
patent: 5986807 (1999-11-01), Fork
patent: 6014944 (2000-01-01), Russell et al.
patent: 6072631 (2000-06-01), Guenther et al.
patent: 6081381 (2000-06-01), Shalapenok et al.
patent: 6093934 (2000-07-01), Yamazaki et al.
patent: 6117752 (2000-09-01), Suzuki
patent: 6120976 (2000-09-01), Treadwell et al.
patent: 6130009 (2000-10-01), Smith et al.
patent: 6130455 (2000-10-01), Yoshinouchi
patent: 6156997 (2000-12-01), Yamazaki et al.
patent: 6162711 (2000-12-01), Ma et al.
patent: 6169014 (2001-01-01), McCulloch
patent: 6172820 (2001-01-01), Kuwahara
patent: 6177301 (2001-01-01), Jung
patent: 6187088 (2001-02-01), Okumura
patent: 6190985 (2001-02-01), Buynoski
patent: 6193796 (2001-02-01), Yang
patent: 6203952 (2001-03-01), O'Brien et al.
patent: 6235614 (2001-05-01), Yang
patent: 6242291 (2001-06-01), Kusumoto et al.
patent: 6255146 (2001-07-01), Shimizu et al.
patent: 6285001 (2001-09-01), Fleming et al.
patent: 6300175 (2001-10-01), Moon
patent: 6313435 (2001-11-01), Shoemaker et al.
patent: 6316338 (2001-11-01), Jung
patent: 6320227 (2001-11-01), Lee et al.
patent: 6322625 (2001-11-01), Im
patent: 6326286 (2001-12-01), Park et al.
patent: 6333232 (2001-12-01), Kunikiyo
patent: 6368945 (2002-04-01), Im
patent: 6388146 (2002-05-01), Onishi et al.
patent: 6407012 (2002-06-01), Miyasaka et al.
patent: 6444506 (2002-09-01), Kusumoto et al.
patent: 6468845 (2002-10-01), Nakajima et al.
patent: 6495067 (2002-12-01), Ono
patent: 6511718 (2003-01-01), Paz de Araujo et al.
patent: 6521473 (2003-02-01), Jung
patent: 6521492 (2003-02-01), Miyasaka et al.
patent: 6526585 (2003-03-01), Hill
patent: 6528359 (2003-03-01), Kusumoto et al.
patent: 6555449 (2003-04-01), Im et al.
patent: 6563077 (2003-05-01), Im
patent: 6573531 (2003-06-01), Im et al.
patent: 6582827 (2003-06-01), Im
patent: 6621044 (2003-09-01), Jain et al.
patent: 6635554 (2003-10-01), Im et al.
patent: 6744069 (2004-06-01), Yamazaki et al.
patent: 6830993 (2004-12-01), Im et al.
patent: 2001/0001745 (2001-05-01), Im et al.
patent: 2001/0041426 (2001-11-01), Im
patent: 2002/0104750 (2002-08-01), Ito
patent: 2003/0029212 (2003-02-01), Im
patent: 2003/0096489 (2003-05-01), Im et al.
patent: 2003/0119286 (2003-06-01), Im et al.
patent: 2004/0053450 (2004-03-01), Sposili et al.
patent: 2004/0061843 (2004-04-01), Im
patent: 2005/0032249 (2005-02-01), Im et al.
patent: 2005/0034653 (2005-02-01), Im et al.
patent: 681316 (1995-08-01), None
patent: 655774 (1996-07-01), None
patent: 1067593 (2001-10-01), None
patent: 2338342 (1999-12-01), None
patent: 2338343 (1999-12-01), None
patent: 2338597 (1999-12-01), None
patent: 62181419 (1987-08-01), None
patent: 2283036 (1990-11-01), None
patent: 04033327 (1992-02-01), None
patent: 6252048 (1994-09-01), None
patent: 6283422 (1994-10-01), None
patent: 7176757 (1995-07-01), None
patent: 11064883 (1999-03-01), None
patent: 2001023920 (2001-01-01), None
patent: 9745827 (1997-12-01), None
patent: 9824118 (1998-06-01), None
patent: 9931719 (1999-06-01), None
patent: 0014784 (2000-03-01), None
patent: 0118854 (2001-03-01), None
patent: 0118855 (2001-03-01), None
patent: 0171786 (2001-09-01), None
patent: 02031869 (2002-04-01), None
patent: 0242847 (2002-05-01), None
patent: 02086954 (2002-05-01), None
patent: 02086955 (2002-10-01), None
patent: 03018882 (2003-03-01), None
patent: 03046965 (2003-06-01), None
patent: 04075263 (2003-08-01), None
patent: 03084688 (2003-10-01), None
patent: 04017379 (2004-02-01), None
patent: 04017380 (2004-02-01), None
patent: 04017381 (2004-02-01), None
patent: 04017382 (2004-02-01), None
U.S. Appl. No. 60/253,256, filed Aug. 31, 2003, Im.
Im et al., “Controlled Super-Lateral Growth of Si Films for Microstructural Manipulation and Optimization”, Phys. Stat. Sol. (a), vol. 166, p. 603 (1998).
S.D. Brotherton et al., “Influence of Melt Depth in Laser Crystallized Poly-Si Thin Film Transistors,” 82 J. Appl. Phys. 4086 (1997).
J.S. Im et al., “Crystalline Si Films for Integrated Active-Matrix Liquid-Crystals Displays,” 21 MRS Bulletin 39 (1996).
Im et al., “Single-Crystal Si Films for Thin-Film Transistor Devices,” Appl. Phys. Lett., vol. 70 (25), p. 3434 (1997).
Sposili et al., “Sequential Lateral Solidification of Thin Silicon Films on SiO2”, Appl, Phys. Lett., vol. 69 (19), p. 2864 (1996).
Crowder et al., “Low-Temperature Single-Crystal Si TFT's Fabricated on Si Films processed via Sequential Lateral Solidification”, IEEE Electron Device Letter, vol. 19 (8), p. 306 (1998).
Sposili et al., “Single-Crystal Si Films via a Low-Substrate-Temperature Excimer-Laser Crystallization Method”, Mat. Res. Soc. Symp. Proc. vol. 452, pp. 953-958, 1997 Materials Reasearch Society.
C. E. Nebel, “Laser Interference Structuring of A-SI:h” Amorphous Silicon Technology—1996, San Francisco, CA Apr. 8-12, 1996, Materials Research Society Symposium Proceedings, vol. 420, Pittsburgh, PA.
J. H. Jeon et al., “Two-step laser recrystallization of poly-Si for effective control of grain boundaries”, Journal of Non Crystalline Solids, North-Holland Publishing Company, NL, vol. 266-269, May 2000, pp. 645-649.
H. Endert et al., “Excimer Laser: A New Tool for Precision Micromaching,” 27 Optical and Quantum Electronics, 1319 (1995).
“Overview of Beam Delivery Systems for Excimer Lasers,” Micro/Las Lasersystem GMBH.
K.H. Weiner et al., “Ultrashallow Junction Formation Using Projection Gas Immersion Laser Doping (PGILD),” A Verdant Technologies Technical Brief, Aug. 20, 1997.
Hau-Riege C.S. et al., “The Effects Microstructural Transitions at Width Transitions on interconnect reliabity,” Journal of Applied Physics, Jun. 15, 2000, vol. 87, No. 12, pp. 8467-8472.
McWilliams et al., ȁ
Im James
Van Der Wilt Paul Christiaan
Baker & Botts LLP
Le Thao P.
The Trustees of Columbia University in the City of New York
LandOfFree
Polycrystalline TFT uniformity through microstructure... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Polycrystalline TFT uniformity through microstructure..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polycrystalline TFT uniformity through microstructure... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3731855