Polycrystalline silicon thin film transistor

Details Polycrystalline silicon thin film transistor Polycrystalline silicon thin film transistor

1991-08-08

1994-01-04

Robinson, Ellis P.

Stock material or miscellaneous articles

Structurally defined web or sheet

Discontinuous or differential coating, impregnation or bond

428336, 428428, 428432, 428446, 428472, 428702, 428901, 428701, 257347, B32B 1700

Patent

active

052758729

ABSTRACT:
An improved field effect transistor having a source region, a drain region, and channel region in a polycrystalline silicon layer, the improvement being that the polycrystalline silicon layer has approximately equal concentrations of N and P type dopants embodied therein, which serves to restrain movement of P/N junctions.

REFERENCES:
patent: 4178191 (1979-12-01), Flatley
patent: 4489104 (1984-12-01), Lee
patent: 4673531 (1987-06-01), Lee
patent: 4682407 (1987-07-01), Wilson
patent: 4772927 (1988-09-01), Saito
patent: 4866006 (1989-09-01), Imagawa
"Polycrystalline-Silicon Device Technology for Large-Area Electronics," IEEE Transactions on Electron Devices, 33, 4, 477-481.

Affiliated with

Also associated with

Rating

Polycrystalline silicon thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polycrystalline silicon thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polycrystalline silicon thin film transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-305804