Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-04-16
1998-10-20
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, 257379, 365 51, 365 63, H01L 27108, H01L 2976
Patent
active
058250603
ABSTRACT:
A resistor structure suitable for use in an SRAM cell is formed from polycrystalline silicon elements. These elements have a cross-section which is less than is normally available for polycrystalline silicon interconnect lines, allowing increased resistance values to be implemented using a lesser amount of surface area. In one embodiment of a resistor, sidewall spacers are formed in a cavity within an insulating layer, and polycrystalline silicon resistive elements are formed in the narrowed region within the cavity. In another embodiment, polycrystalline silicon resistors alongside vertical sidewalls of a cavity are formed using sidewall spacer technology. In either event, the cross-sectional area of the resistors is less than that normally available for a given processing technology, resulting in enhanced resistor values.
REFERENCES:
patent: 4110776 (1978-08-01), Rao et al.
patent: 4774203 (1988-09-01), Ikeda et al.
patent: 4823179 (1989-04-01), Koshimaru
patent: 4835589 (1989-05-01), Pfiester
patent: 5012443 (1991-04-01), Ema
Galanthay Theodore E.
Hill Kenneth C.
Jorgenson Lisa K.
Martin Wallace Valencia
Saadat Mahshid D.
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