Polycrystalline silicon etching with tetramethylammonium hydroxi

Details Polycrystalline silicon etching with tetramethylammonium hydroxi Polycrystalline silicon etching with tetramethylammonium hydroxi

1977-12-16

1978-09-12

Klein, David

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

252 795, H01L 21306

Patent

active

041135512

ABSTRACT:
A family of etchants for polycrystalline silicon based upon an aqueous solution of NR.sub.4 OH, where R is an alkyl group, has a relatively low etching rate enabling the exercise of better control over the delineation of fine structures.

REFERENCES:
patent: 3361589 (1968-01-01), Lindsey
patent: 3738881 (1973-06-01), Erdman et al.
patent: 3791848 (1974-02-01), DeAngelo
patent: 3909325 (1975-09-01), Church et al.
McCutchenson's Detergents and Emulsifiers, 1969 Annual, p. 105.

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