Polycrystalline silicon contact structure

Details Polycrystalline silicon contact structure Polycrystalline silicon contact structure

1990-04-30

1992-09-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437200, 437 43, 437192, 148DIG19, H01L 2144

Patent

active

051513870

ABSTRACT:
A contact structure provides electrical contact between two polycrystalline silicon interconnect layers. The lower layer has a silicide layer on its upper surface. The upper polycrystalline silicon layer can be doped with a different conductivity type, and makes an ohmic contact with the silicided region of the lower polycrystalline silicon layer.

REFERENCES:
patent: 4398335 (1983-08-01), Lehrer
patent: 4562640 (1986-01-01), Widmann et al.
patent: 4581623 (1986-04-01), Wang
patent: 4617071 (1986-10-01), Vora
patent: 4677735 (1987-07-01), Malhi
patent: 4714685 (1987-12-01), Schubert
patent: 4849344 (1989-07-01), Desbiens et al.
patent: 4870033 (1989-09-01), Hotta et al.
patent: 4874719 (1989-10-01), Kurosawa
patent: 4948747 (1990-08-01), Pfiester
Wolf, Stanley, Silicon Processing for the VLSI Era, vol. 2, Lattice Press, Sunset Beach, Calif. (1990), Chapters 3 & 4.

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