Polycrystalline SiGe junctions for advanced devices

Details Polycrystalline SiGe junctions for advanced devices Polycrystalline SiGe junctions for advanced devices

2006-11-14

2006-11-14

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

C257SE21572

Reexamination Certificate

active

07135391

ABSTRACT:
A structure and method of fabrication for MOSFET devices with a polycrystalline SiGe junction is disclosed. Ge is selectively grown on Si while Si is selectively grown on Ge. Alternating depositions of Ge and Si layers yield the SiGe junction. The deposited layers are doped, and subsequently the dopants outdiffused into the device body. A thin porous oxide layer between the polycrystalline Ge and Si layers enhances the isotropy of the SiGe junctions.

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