Polycrystalline semiconductor processing

Details Polycrystalline semiconductor processing Polycrystalline semiconductor processing

1981-10-16

1983-04-05

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG88, 156605, 136258, 423348, C30B 110

Patent

active

043790208

ABSTRACT:
A process for forming large-grain polycrystalline films from amorphous films for use as photovoltaic devices. The process operates on the amorphous film and uses the driving force inherent to the transition from the amorphous state to the crystalline state as the force which drives the grain growth process. The resultant polycrystalline film is characterized by a grain size that is greater than the thickness of the film.
A thin amorphous film is deposited on a substrate. The formation of a plurality of crystalline embryos is induced in the amorphous film at predetermined spaced apart locations and nucleation is inhibited elsewhere in the film. The crystalline embryos are caused to grow in the amorphous film, without further nucleation occurring in the film, until the growth of the embryos is halted by imgingement on adjacently growing embryos. The process is applicable to both batch and continuous processing techniques. In either type of process, the thin amorphous film is sequentially doped with p and n type dopants. Doping is effected either before or after the formation and growth of the crystalline embryos in the amorphous film, or during a continuously proceeding crystallization step.

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patent: 4198246 (1980-04-01), Wu
Fan et al., "Crystallization of Amorphous Si Films", published in Applied Phys. Letts., vol. 27, Aug. 15, 1975, pp. 224-226.

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