Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Patent
1994-01-14
1996-02-27
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With provision for cooling the housing or its contents
257 77, 257739, 361708, H01L 2334, H01L 310312
Patent
active
054951267
ABSTRACT:
A polycrystalline diamond is prepared by chemical vapor deposition (step 101). A surface of the polycrystalline diamond is metallized (step 102). The metallized surface of the polycrystalline diamond is grooved with a YAG laser (step 103). A wedge or the like is driven into the grooves of the polycrystalline diamond to pressurize the same, whereby the polycrystalline diamond is divided along the grooves (step 104). Alternatively, a surface of a polycrystalline diamond prepared by chemical vapor deposition is grooved with a YAG laser (step 112), and the surface of the polycrystalline diamond is metallized (step 113) after the grooving. The obtained diamond heat sink (10) includes a first layer (11a) grooved with a laser, and a mechanically divided second layer (11b). Graphite adheres to the outer peripheral surface of the first layer (11a). The outer peripheral surface of the second layer (11b) has a greater surface roughness than that of the first layer (11a).
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Iguchi Takahisa
Nakai Tetsuo
Nakamura Tsutomu
Fasse W. F.
Fasse W. G.
Hille Rolf
Ostrowski David
Sumitomo Electric Industries Ltd.
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