Polyconductor line end formation and related mask

Details Polyconductor line end formation and related mask Polyconductor line end formation and related mask

2007-11-06

2008-12-16

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S592000, C257SE21039

Reexamination Certificate

active

07465615

ABSTRACT:
Methods of forming adjacent polyconductor line ends and a mask therefor are disclosed. In one embodiment, the method includes forming a polyconductor layer over an isolation region; forming a mask over the polyconductor layer, the mask including shapes to create the polyconductor line ends and a correction element to ensure a designed proximity of the polyconductor line ends; and etching the polyconductor layer using the patterned photoresist mask to create the adjacent polyconductor line ends, wherein the correction element is removed during the etching.

REFERENCES:
patent: 4343877 (1982-08-01), Chiang
patent: 6034877 (2000-03-01), Bronner et al.
patent: 6430733 (2002-08-01), Cohn et al.
patent: 6593631 (2003-07-01), Lee et al.
patent: 2005/0271949 (2005-12-01), Corboy et al.

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