Active solid-state devices (e.g. – transistors – solid-state diode – Fet configuration adapted for use as static memory cell – With passive components
Patent
1996-10-23
1999-01-05
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Fet configuration adapted for use as static memory cell
With passive components,
256536, 256538, 256903, 365175, H01L 2711, H01L 2900, G11C 1136
Patent
active
058567089
ABSTRACT:
A method of manufacturing an SRAM cell with polysilicon diode loads using standard logic technology processing. A P+ polysilicon area and an N+ polysilicon are forms a lateral PN junction. In standard logic technology processing the lateral PN junction is shorted out. In the present invention the lateral PN junction is allowed to function as a polysilicon diode load and an ancilliary lateral PN junction is shorted using a polycide cap layer.
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patent: 5313087 (1994-05-01), Chan et al.
patent: 5396454 (1995-03-01), Nowak
patent: 5616946 (1997-04-01), Hsu et al.
Advanced Micro Devices , Inc.
Nelson H. Donald
Saadat Mahshid D.
Wilson Allan R.
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