Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-01-30
1998-10-06
Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257369, 257374, 257383, 257384, 257408, 257751, 257754, 257757, 438396, 438397, H01L 2978, H01L 2128
Patent
active
058180923
ABSTRACT:
A method of forming a polycide thin film. First, a silicon layer is formed. Next, a thin barrier layer is formed on the first silicon layer. A second silicon layer is then formed on the barrier layer. Next, a metal layer is formed on the second silicon layer. The metal layer and the second silicon layer are then reacted together to form a silicide.
REFERENCES:
patent: 5025301 (1991-06-01), Shimizu
patent: 5164333 (1992-11-01), Schwalke et al.
patent: 5170242 (1992-12-01), Stevens et al.
patent: 5198832 (1993-03-01), Campbell et al.
patent: 5369303 (1994-11-01), Wei
patent: 5543362 (1996-08-01), Wu
patent: 5543644 (1996-08-01), Abt et al.
patent: 5576579 (1996-11-01), Agnello et al.
patent: 5597751 (1997-01-01), Wang
Wolf, et al.; "Chemical Vapor Deposition of Amorphous and Polycrystalline Films"; 1986; Silicon Processing for the VLSI Era; vol. 1; pp. 175-180, 397-399.
Murarka; "Refractory Silicides for Integrated Circuits"; J. Vac. Sci. Technol., 17(4), Jul./Aug. 1980; pp. 775-792.
Wolf; "Silicon Processing for the VLSI Era"; vol. 3: the Submicron MOSFET; 1995; pp. 228-231, 616-621.
Ghandhi; "VLSI Fabrication Principles Silicon and Gallium Arsenide"; 1983; pp. 371-373.
Zong, et al.; "Materials and Process Characterization for VLSI"; 1988 (ICMPC '88); World Scientific; pp. 474-475.
Bai Gang
Fraser David B.
Intel Corporation
Wallace Valencia
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