Polycide etching with HCL and chlorine

Details Polycide etching with HCL and chlorine Polycide etching with HCL and chlorine

1996-05-13

1999-02-23

McCamish, Marion

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438738, H01L 213065

Patent

active

058743634

ABSTRACT:
Metal silicide is removed at a faster rate than polysilicon in dry etching of metal silicide/polysilicon composites with an etching gas made from HCl and Cl.sub.2 at a volumetric flowrate ratio of HCl:Cl.sub.2 within the range of 3:1 to 5:1.

REFERENCES:
patent: 5110408 (1992-05-01), Fujii et al.
patent: 5169487 (1992-12-01), Langley et al.
patent: 5200028 (1993-04-01), Tatsumi
patent: 5219485 (1993-06-01), Wang et al.
patent: 5223085 (1993-06-01), Kawai et al.
patent: 5259923 (1993-11-01), Hori et al.
patent: 5354416 (1994-10-01), Okudaira et al.
patent: 5358601 (1994-10-01), Cathey
patent: 5387556 (1995-02-01), Xiaobing et al.
patent: 5543362 (1996-08-01), Wu

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