Poly-silicon thin film transistor having back bias effects...

Details Poly-silicon thin film transistor having back bias effects... Poly-silicon thin film transistor having back bias effects...

2005-08-30

2005-08-30

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S403000

Reexamination Certificate

active

06936504

ABSTRACT:
A poly-silicon (poly-Si) thin film transistor (TFT) having a back bias effect is provided in order to enhance characteristics of a leakage current, a sub-threshold slope, and an on-current. The poly-Si TFT includes a glass substrate, an island type buried electrode pad formed of an conductive material on one side of the glass substrate where the back bias voltage is applied, a buffer layer formed of an insulation material on the whole surface of the glass substrate, and a poly-Si TFT formed on the upper portion of the buffer layer. A method of fabricating the TFT is also provided.

REFERENCES:
patent: 5356824 (1994-10-01), Chouan et al.
patent: 5801395 (1998-09-01), Lee et al.
patent: 5982004 (1999-11-01), Sin et al.
patent: 6194282 (2001-02-01), Niimi et al.
patent: 6396079 (2002-05-01), Hayashi et al.
Wolf, “Silicon Processing for the VLSI Era”, vol. 2, pp. 183-186, 237-238, 398-399.

Affiliated with

Also associated with

Rating

Poly-silicon thin film transistor having back bias effects... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Poly-silicon thin film transistor having back bias effects..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Poly-silicon thin film transistor having back bias effects... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3497852