Poly-load resistor for SRAM cell

Details Poly-load resistor for SRAM cell Poly-load resistor for SRAM cell

1996-06-27

1999-03-16

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257380, 257538, H01L 2976, H01L 2994, H01L 31062, H01L 31119

Patent

active

058834176

ABSTRACT:
The inventive SRAM cell has a poly-load resistor which comprises a thick supply voltage (Vcc) interconnect, a thick driver interconnect on a thin load resistance region which is electrically connected to both interconnects. The novel poly-load resistor overcomes the problem of lateral diffusion from the interconnect regions into the load region. The resulting SRAM cell has a low Vcc interconnect resistance.

REFERENCES:
patent: 5594269 (1997-01-01), Spinner, III et al.

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