Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2008-07-18
2010-12-14
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S070000, C257S075000, C257SE21049, C257SE21414, C438S166000, C977S762000, C977S778000
Reexamination Certificate
active
07851802
ABSTRACT:
Example embodiments relate to a poly-crystalline silicon (Si) thin film, a thin film transistor (TFT) formed from a poly-crystalline silicon (Si) thin film and methods of manufacturing the same. The method of manufacturing the poly-crystalline Si thin film includes forming an active layer formed of amorphous Si on a substrate, coating a gold nanorod on the active layer, and irradiating infrared rays onto the gold nanorod to crystallize the active layer.
REFERENCES:
patent: 2010/0127172 (2010-05-01), Nikoobakht
Choi Jae-young
Jung Ji-sim
Kim Tae-sang
Kwon Jang-yeon
Lee Sang-yoon
Harness & Dickey & Pierce P.L.C.
Pert Evan
Samsung Electronics Co,. Ltd.
Wilson Scott R
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