Etching a substrate: processes – Planarizing a nonplanar surface
Reexamination Certificate
2006-05-30
2006-05-30
Ahmed, Shamim (Department: 1765)
Etching a substrate: processes
Planarizing a nonplanar surface
C216S017000, C216S018000, C438S691000, C438S692000, C252S079100
Reexamination Certificate
active
07052620
ABSTRACT:
A polishing slurry for an aluminum-based metal includes an oxidizing agent having a standard electrode potential of 1.7 V or more, amino acid or amino acid compound, and bi- or higher than bi-valent aromatic carboxylic acid having a carbocycle or a heterocycle.
REFERENCES:
patent: 5770095 (1998-06-01), Sasaki et al.
patent: 6585786 (2003-07-01), Tsuchiya et al.
patent: 6596638 (2003-07-01), Kondo et al.
patent: 6740589 (2004-05-01), Shimazu et al.
patent: 2001/0006224 (2001-07-01), Tsuchiya et al.
patent: 09-148431 (1997-06-01), None
patent: 2000-133621 (2000-05-01), None
patent: 2001-110759 (2001-04-01), None
patent: 2001-303050 (2001-10-01), None
patent: 2002-164308 (2002-06-01), None
Japanese Patent Office Notification of Reasons for Rejection and English translation thereof. Application No. 2002064210.
Matsui Yukiteru
Minamihaba Gaku
Ahmed Shamim
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
LandOfFree
Polishing slurry for aluminum-based metal, and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Polishing slurry for aluminum-based metal, and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polishing slurry for aluminum-based metal, and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3548775