Polishing slurry

Details Polishing slurry Polishing slurry

2006-01-05

2011-11-22

Norton, Nadine G (Department: 1713)

Compositions

Etching or brightening compositions

C252S079200, C252S079300, C252S079400, C438S689000, C438S692000, C438S702000

Reexamination Certificate

active

08062548

ABSTRACT:
An object of one embodiment of the present invention is to provide a polishing slurry which can reduce dishing and erosion of a to-be-polished semiconductor wafer. The polishing slurry contains an oxidizing agent and two or more kinds of abrasive grains for polishing, i.e., fumed silica and colloidal silica. A ratio (selectivity ratio) between a polishing rate of a metal film such as a tungsten film and a polishing rate of an insulating film (oxide film) such as a SiO2film can be adjusted by changing a mixing ratio between fumed silica and colloidal silica, and dishing and erosion of the semiconductor wafer can be thus reduced.

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English Translation of the International Preliminary Report on Patentability dated Dec. 21, 2007, for International Application No. PCT/JP2006/300036 (4 pp.).
Notice of Reasons for Refusal for JP 2006-550892 dated Aug. 30, 2011.

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