Polishing pad and semiconductor device manufacturing method

Details Polishing pad and semiconductor device manufacturing method Polishing pad and semiconductor device manufacturing method

2004-10-20

2010-06-08

Hail, III, Joseph J (Department: 3723)

Abrading

Abrading process

Glass or stone abrading

C451S288000, C451S526000

Reexamination Certificate

active

07731568

ABSTRACT:
The object of the invention is to provide a polishing pad capable of maintaining high-precision end-point optical detection over a long period from the start of use to the end of use even if polishing is performed with an alkaline or acid slurry, as well as a method of manufacturing a semiconductor device with this polishing pad. The polishing pad of the invention is used in chemical mechanical polishing and has a polishing region and a light-transmitting region, wherein the light-transmitting region satisfies that the difference ΔT (ΔT=T0−T1) (%) between T0and T1is within 10(%) over the whole range of measurement wavelengths of from 400 to 700 nm, wherein T1is the light transmittance (%) of the light-transmitting region measured at the measurement wavelength λ after dipping for 24 hours in a KOH aqueous solution at pH 11 or an H2O2aqueous solution at pH 4 and T0is the light-transmittance (%) measured at the measurement wavelength λ before the dipping.

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