Polishing method, polishing system and process-managing system

Details Polishing method, polishing system and process-managing system Polishing method, polishing system and process-managing system

2005-07-05

2005-07-05

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S694000, C438S695000, C438S697000, C438S698000

Reexamination Certificate

active

06914000

ABSTRACT:
A polishing method of the present invention is a polishing method for planarizing a film to be polished that is deposited on a wafer, and includes a step (a) of establishing a polishing rate distribution of the film to be polished that is deposited on the wafer and a target film thickness distribution after polishing of the film to be polished, a step (b) of measuring a film thickness distribution before polishing of the film to be polished, a step (c) of calculating a predicted film thickness distribution after polishing of the film to be polished from the film thickness distribution before polishing and the polishing rate distribution, a step (d) of calculating a pressure against a polishing pad for each of a plurality of regions of the film to be polished and a polishing time from the predicted film thickness distribution and the target film thickness distribution, and a step (e) of polishing while applying the pressure against the film to be polished during the polishing time.

REFERENCES:
patent: 6113462 (2000-09-01), Yang
patent: 1 066 925 (2000-01-01), None
patent: 1066925 (2001-01-01), None
patent: 2001-60572 (2001-03-01), None

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