Polishing method for SOI

Details Polishing method for SOI Polishing method for SOI

1995-12-21

1998-12-22

Niebling, John

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

438 5, 438 13, 438659, 438692, 216 52, 451288, H01L 2166

Patent

active

058518460

ABSTRACT:
In a dielectric isolation substrate, an end point of a polishing process for selective polishing for forming an SOI layer is detected with a high precision. When polishing a wafer with a polishing pad, the temperature of a region of the polishing pad having polished the wafer at a position immediately thereafter is detected by a temperature sensor and the selective polishing process is ended by discriminating that the rate of variation in the detected temperature has changed from a positive to a negative state and then to a fixed saturated state.

REFERENCES:
patent: 5036630 (1991-08-01), Kaanta et al.
patent: 5084419 (1992-01-01), Sakao
patent: 5196353 (1993-03-01), Sandhu et al.
patent: 5437762 (1995-08-01), Ochiai et al.
patent: 5486129 (1996-01-01), Sandhu et al.

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