Polishing method for semiconductor wafer

Details Polishing method for semiconductor wafer Polishing method for semiconductor wafer

2007-12-04

2007-12-04

Tran, Binh X. (Department: 1765)

Etching a substrate: processes

Nongaseous phase etching of substrate

Using film of etchant between a stationary surface and a...

C216S093000, C438S692000, C438S693000, C451S034000

Reexamination Certificate

active

11512837

ABSTRACT:
A polishing method includes a slurry adjusting step for adjusting a polishing slurry containing silica particles so that the number of silica particles having a composition ratio of Si/O of 50–60 wt %/40–50 wt %, a modulus of elasticity of 1.4×1010Pa or higher and a particle size of 1 μm or larger is 3000 pcs/ml or less. A semiconductor wafer is polished using the polishing slurry adjusted in the slurry adjusting step.

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