Polishing method for polycrystalline silicon

Details Polishing method for polycrystalline silicon Polishing method for polycrystalline silicon

1992-08-31

1994-12-27

Thomas, Tom

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437228, 252 795, 106 3, H01L 21306

Patent

active

053762223

ABSTRACT:
This invention discloses a polishing method for flattening an inter-level insulating film or polycrystalline silicon inside a device isolation ditch in a semiconductor fabrication process.
To this end, the present invention grinds and flattens an insulating film having a step on the surface thereof by using a polishing solution containing an alkali solution and a grain, wherein a cation concentration in the alkali solution is higher than an OH.sup.- ion concentration in the alkali solution.

REFERENCES:
patent: 4057939 (1977-11-01), Basi
patent: 4786325 (1988-11-01), Melard et al.
patent: 4942697 (1990-07-01), Khaladji et al.
patent: 4959113 (1990-09-01), Roberts
patent: 4968381 (1990-11-01), Prigge et al.
"Planarization: Reading Between the Lines", Sureface Tech Review, Rodel, vol. 1, issue 8, Mar. 1990, pp. 1-7.

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