Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-06-14
2005-06-14
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S633000, C438S645000, C438S692000
Reexamination Certificate
active
06905957
ABSTRACT:
A preceding wafer having an aluminum wiring and a silicon oxide film formed on an insulating film is chemico-mechanically polished. In the stage in which surface irregularities of the silicon oxide film are eliminated, polishing is discontinued. On the basis of the result, a polishing time is determined in accordance with the following formula:in-line-formulae description="In-line Formulae" end="lead"?T=(D1−D2)/v+t1in-line-formulae description="In-line Formulae" end="tail"?where, D1represents the thickness in the stage in which polishing is discontinued; D2,a target thickness; t1,a time required from the initial thickness to reach the thickness D1;and the polishing rate of the material of the silicon oxide film formed on a flat substrate is denoted as v.
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Lee Hsien-Ming
NEC Corporation
Scully Scott Murphy & Presser
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