Polishing method and apparatus

Abrading – Precision device or process - or with condition responsive... – With indicating

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C156S345120, C216S038000, C216S088000, C438S692000, C451S041000, C451S054000, C451S067000, C451S288000, C451S290000, C451S339000

Reexamination Certificate

active

07101259

ABSTRACT:
A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.

REFERENCES:
patent: 5635053 (1997-06-01), Aoki et al.
patent: 5676760 (1997-10-01), Aoki et al.
patent: 5922620 (1999-07-01), Shimomura et al.
patent: 5931722 (1999-08-01), Ohmi et al.
patent: 5993639 (1999-11-01), Miyashita et al.
patent: 5996594 (1999-12-01), Roy et al.
patent: 6003527 (1999-12-01), Netsu et al.
patent: 6071816 (2000-06-01), Watts et al.
patent: 6082373 (2000-07-01), Sakurai et al.
patent: 6098638 (2000-08-01), Miyashita et al.
patent: 6167583 (2001-01-01), Miyashita et al.
patent: 6325698 (2001-12-01), Wada et al.
patent: 6379230 (2002-04-01), Hayashi et al.
patent: 0 806 265 (1997-11-01), None
patent: 0 913 442 (1999-05-01), None
patent: 2 324 750 (1998-11-01), None
patent: 62-74487 (1987-04-01), None
patent: 64-90088 (1989-04-01), None
patent: 3-136329 (1991-06-01), None
patent: 6-260480 (1994-09-01), None
patent: 10-99802 (1998-04-01), None
patent: 10-270394 (1998-10-01), None
patent: 10-314686 (1998-12-01), None
Toshiaki Kawane et al., “NEC Approach”, Semiconductor World, Oct. 1998.
Takeshi Hattori et al., “Contamination Removal by Single-Wafer Spin Cleaning with Repetitve Use of Ozonized Wa and Dilute HF”, Sony Corporation Semiconductor Company, Japan, Sep. 1998.
Aoki et al., “A degradation-free Cu/HSQ damascene technology using metal mask patterning and post-CMP cleanir by electrolytic ionized water”, Technical Digest, International Electron Devices Meeting (Dec. 7, 1997), pp. 31.1.1 through 31.4.4.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Polishing method and apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polishing method and apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polishing method and apparatus will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3612810

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.