Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-10-09
2007-10-09
Tran, Binh X. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S693000, C438S695000, C438S697000, C438S754000
Reexamination Certificate
active
11581375
ABSTRACT:
A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced. A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.
REFERENCES:
patent: 4944836 (1990-07-01), Beyer et al.
patent: 5532094 (1996-07-01), Arimura et al.
patent: 5575885 (1996-11-01), Hirabayashi et al.
patent: 5674443 (1997-10-01), Lee et al.
patent: 5676760 (1997-10-01), Aoki et al.
patent: 5695660 (1997-12-01), Litvak
patent: 5733176 (1998-03-01), Robinson et al.
patent: 5759917 (1998-06-01), Grover
patent: 5770095 (1998-06-01), Sasaki et al.
patent: 5783489 (1998-07-01), Kaufman et al.
patent: 5840629 (1998-11-01), Carpio
patent: 5858813 (1999-01-01), Scherber et al.
patent: 5866031 (1999-02-01), Carpio et al.
patent: 5875507 (1999-03-01), Stephens
patent: 5885477 (1999-03-01), Rasmussen et al.
patent: 5932486 (1999-08-01), Cook et al.
patent: 5954997 (1999-09-01), Kaufman et al.
patent: 5972792 (1999-10-01), Hudson
patent: 5981454 (1999-11-01), Small
patent: 6001269 (1999-12-01), Suthuraman et al.
patent: 6117775 (2000-09-01), Kondo et al.
patent: 6117783 (2000-09-01), Small et al.
patent: 6126853 (2000-10-01), Kaufman et al.
patent: 6596638 (2003-07-01), Kondo et al.
patent: 7132367 (2006-11-01), Kondo et al.
patent: 06-295892 (1994-10-01), None
patent: 07-094455 (1995-04-01), None
patent: 07-161669 (1995-06-01), None
patent: 07-233485 (1995-09-01), None
patent: 08-083780 (1996-03-01), None
patent: 11-135466 (1999-05-01), None
patent: 2001-502610 (2001-02-01), None
patent: WO 98/18159 (1998-04-01), None
English Translation of Official Action mailed Nov. 28, 2006, for Japanese Application No. 2003-205241.
Official Action dated Oct. 10, 2006, for Japanese Application No. 2003-115184 (English translation only).
“Pattern Geometry Effects in the Chemical-Mechanical Polishing of Inlaid Copper Structures”, J. Electrochem. Soc., vol. 141, p. 2842-2848, Oct. 10, 1994.
“An Examination of Slurry for Wiring Metal's Chemical-Mechanical Polishing”, vol. 41, p. 35-37, Jun. 1997 (in Japanese).
“Semiconductor International”, Semiconductor World, p. 171-172, May 1995 (in Japanese).
“Electrochemical Potential Measurements during the Chemical-Mechanical Polishing of Copper Thin Films”, J.E. Electrochem. Soc., vol. 142, Jul. 7, 1995 p. 2379-2385.
“Chemical Mechanical Polishing of Copper using a Slurry composed of glycine and hydrogen peroxide”, CMP-MIC Conferences 1996 ISMIC, Feb. 22-23, 1996, CMP p. 119-123.
Kashiwagi,The Science of CMP(1997), p. 299-300.
Hinode Kenji
Hom-ma Yoshio
Kondo Seiichi
Sakuma Noriyuki
Takeda Ken'ichi
Antonelli Terry Stout & Kraus LLP
Hitachi , Ltd.
Tran Binh X.
LandOfFree
Polishing method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Polishing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polishing method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3886744