Polishing method

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S692000, C438S693000, C438S754000

Reexamination Certificate

active

07132367

ABSTRACT:
A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

REFERENCES:
patent: 4944836 (1990-07-01), Beyer et al.
patent: 5575885 (1996-11-01), Hirabayashi et al.
patent: 5676760 (1997-10-01), Aoki et al.
patent: 5695660 (1997-12-01), Litvak
patent: 5733176 (1998-03-01), Robinson et al.
patent: 5759917 (1998-06-01), Grover
patent: 5770095 (1998-06-01), Sasaki et al.
patent: 5783489 (1998-07-01), Kaufman et al.
patent: 5840629 (1998-11-01), Carpio
patent: 5858813 (1999-01-01), Scherber et al.
patent: 5866031 (1999-02-01), Carpio et al.
patent: 5875507 (1999-03-01), Stephens
patent: 5932486 (1999-08-01), Cook et al.
patent: 5954997 (1999-09-01), Kaufman et al.
patent: 5972792 (1999-10-01), Hudson
patent: 6001269 (1999-12-01), Suthuraman et al.
patent: 6117775 (2000-09-01), Kondo et al.
patent: 6117783 (2000-09-01), Small et al.
patent: 07-161669 (1995-06-01), None
patent: 07-233485 (1995-09-01), None
“Pattern Geometry Effects in the Chemical-Mechanical Polishing of Inlaid Copper Structures”, J. Electrochem. Soc., vol. 141, p. 2842-2848, Oct. 10, 1994.
“An Examination of Slurry for Wiring Metal's Chemical-Mechanical Polishing”, vol. 41, p. 35-37, Jun. 1997 (in Japanese).
“Semiconductor International”, Semiconductor World, p. 171-172, May 1995 (in Japanese).
“Electrochemical Potential Measurements during the Chemical-Mechanical Polishing of Copper Thin Films”, J.E. Electrochem. Soc., vol. 142, Jul. 7, 1995 p. 2379-2385.
“Chemical Mechanical Polishing of Copper using a Slurry composed of glycine and hydrogen peroxide”, CMP-MIC Conferences 1996 ISMIC, Feb. 22-23, 1996, CMP p. 119-123.
Kashiwagi,The Science of CMP(1997), p. 299-300.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Polishing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polishing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polishing method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3623737

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.