Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-11-07
2006-11-07
Norton, Nadine (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C438S693000, C438S754000
Reexamination Certificate
active
07132367
ABSTRACT:
A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.
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Hinode Kenji
Hom-ma Yoshio
Kondo Seiichi
Sakuma Noriyuki
Takeda Ken'ichi
Antonelli, Terry Stout and Kraus, LLP.
Norton Nadine
Tran Binh X.
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