Polishing fluids and methods for CMP

Abrasive tool making process – material – or composition – With inorganic material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C051S309000, C438S690000, C438S691000, C438S692000, C438S693000

Reexamination Certificate

active

08070843

ABSTRACT:
Provided are several polishing compositions useful for modifying a surface, such as a semiconductor wafer suitable for fabrication of a semiconductor device, especially when used in fixed abrasive planarization techniques. The polishing compositions include a synergistic mixture of water, an oxidizing agent, a complexing agent, and metal ions. Also provided are various methods of surface planarization.

REFERENCES:
patent: 3341384 (1967-09-01), Alderuccio et al.
patent: 3754878 (1973-08-01), Burke
patent: 3756957 (1973-09-01), Shiga
patent: 3877938 (1975-04-01), Shinozaki et al.
patent: 4130454 (1978-12-01), Dutkewych et al.
patent: 4954142 (1990-09-01), Carr et al.
patent: 4987099 (1991-01-01), Flanner
patent: 5014468 (1991-05-01), Ravipati et al.
patent: 5084071 (1992-01-01), Nenadic et al.
patent: 5354490 (1994-10-01), Yu et al.
patent: 5453312 (1995-09-01), Haas et al.
patent: 5454844 (1995-10-01), Hibbard et al.
patent: 5527423 (1996-06-01), Neville et al.
patent: 5692950 (1997-12-01), Rutherford et al.
patent: 5700383 (1997-12-01), Feller et al.
patent: 5770095 (1998-06-01), Sasaki et al.
patent: 5820450 (1998-10-01), Calhoun
patent: 5897375 (1999-04-01), Watts et al.
patent: 5897426 (1999-04-01), Somekh
patent: 5958288 (1999-09-01), Mueller et al.
patent: 5958794 (1999-09-01), Bruxvoort et al.
patent: 5980775 (1999-11-01), Grumbine et al.
patent: 6068787 (2000-05-01), Grumbine et al.
patent: 6177026 (2001-01-01), Wang et al.
patent: 6194317 (2001-02-01), Kaisaki et al.
patent: 6206756 (2001-03-01), Chopra et al.
patent: 6238592 (2001-05-01), Hardy et al.
patent: 6273786 (2001-08-01), Chopra et al.
patent: 6362104 (2002-03-01), Wang et al.
patent: 6435947 (2002-08-01), Mueller et al.
patent: 6436811 (2002-08-01), Wake et al.
patent: 6546939 (2003-04-01), Small
patent: 6589439 (2003-07-01), Honda et al.
patent: 6612916 (2003-09-01), Kollodge et al.
patent: 6630433 (2003-10-01), Zhang et al.
patent: 6699299 (2004-03-01), Sachan et al.
patent: 6709316 (2004-03-01), Sun et al.
patent: 6811583 (2004-11-01), Ishibashi
patent: 6849099 (2005-02-01), Ohno et al.
patent: 7435162 (2008-10-01), Kollodge
patent: 2002/0068454 (2002-06-01), Sun et al.
patent: 2002/0104764 (2002-08-01), Banerjee et al.
patent: 2002/0111024 (2002-08-01), Small et al.
patent: 2002/0168923 (2002-11-01), Kaufman et al.
patent: 2003/0164471 (2003-09-01), Small et al.
patent: 2003/0171072 (2003-09-01), Ward et al.
patent: 2003/0178320 (2003-09-01), Liu et al.
patent: 2003/0181342 (2003-09-01), Seijo et al.
patent: 2003/0181345 (2003-09-01), Bian
patent: 2003/0216049 (2003-11-01), Sun et al.
patent: 2003/0234184 (2003-12-01), Liu et al.
patent: 2004/0009671 (2004-01-01), Kaufman et al.
patent: 2004/0077295 (2004-04-01), Hellring et al.
patent: 2004/0092102 (2004-05-01), Li et al.
patent: 2004/0108302 (2004-06-01), Liu et al.
patent: 2004/0229461 (2004-11-01), Darsillo et al.
patent: 2005/0074967 (2005-04-01), Kondo et al.
patent: 2005/0090104 (2005-04-01), Yang et al.
patent: 2005/0236601 (2005-10-01), Liu et al.
patent: 1242729 (2000-01-01), None
patent: 1254441 (2000-05-01), None
patent: 0 846 742 (1998-06-01), None
patent: 0 896 042 (2005-02-01), None
patent: 1 526 163 (2005-04-01), None
patent: 2 375 116 (2002-11-01), None
patent: 2002-294225 (2002-10-01), None
patent: WO 98/23408 (1998-06-01), None
patent: WO 98/49723 (1998-11-01), None
Leidheiser, Jr., “The Corrosion of Copper, Tin, and Their Alloys”, John Wiley and Sons, Inc., The Electrochemical Society, Inc., New York, NY, pp, 119-123 (1971).
Tonshoff et al., “Abrasive Machining of Silicon”, Annals of the International Institution for Production Engineering Research, vol. 39/2, pp. 621-635, (1990).
Kaufman et al., “Chemical-Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects”,J. Electrochem. Soc., vol. 138, No. 11, pp. 3460-3465, Nov. 1991.
Guthrie et al., “Chemical-Mechanical Polishing to Planarize Blanket and Selective CVD Tungsten”, pp. 527-533, Materials Research Society 1992.
Literature, DuPont, “Oxone® Monopersulfate Compound”, 1994.
Farkas et al., “Oxidation and Etching of Tungsten in CMP Slurries”, pp. 25-32, Materials Research Society 1995.
Printed Circuits Handbook, Clyde F. Coombs, Jr., Editor, Fourth Edition, pp. 21.5-21.23, 1995.
Literature, Cabot, General Information on SEMI-SPERSE™ W-A355 Polishing Slurry for Tungsten CMP, 1995.
Literature, Cabot, SEMI-SPERSE™ W-A355 Polishing Slurry for Tungsten CMP, 1995.
Literature, Cabot, “SEMI-SPERSE™ FE-10 Oxidizer Solution for Tungsten CMP”, 1995.
Kim et al., “Self-Conditioning Fixed Abrasive Pad in CMP”, Journal of the Electrochemical Society, 151 (12), pp. G858-G862 (2004).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Polishing fluids and methods for CMP does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polishing fluids and methods for CMP, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polishing fluids and methods for CMP will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4311796

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.