Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-03-04
2008-05-27
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S626000, C252S079100
Reexamination Certificate
active
07378348
ABSTRACT:
An insulating film comprising an organic silicon material having a C—Si bond and a Si—O bond is used for a semiconductor integrated circuit, and for polishing of its surface, a polishing compound comprising water and particles of at least one specific rare earth compound selected from the group consisting of a rare earth oxide, a rare earth fluoride, a rare earth oxyfluoride, a rare earth oxide except cerium oxide and a composite compound thereof, or a polishing compound having the above composition and further containing cerium oxide particles, is used. It is possible to provide a high quality polished surface which is free from or has reduced defects such as cracks, scratches or film peeling.
REFERENCES:
patent: 4769073 (1988-09-01), Tastu et al.
patent: 5445996 (1995-08-01), Kodera et al.
patent: 6110396 (2000-08-01), Ronay
patent: 6174454 (2001-01-01), Tsai et al.
patent: 6893476 (2005-05-01), Siddiqui et al.
patent: 2003/0109202 (2003-06-01), Matsuno et al.
patent: 2003/0228762 (2003-12-01), Moeggenborg et al.
patent: 2004/0139764 (2004-07-01), Komiya et al.
patent: 0 822 164 (1998-02-01), None
patent: 1 219 568 (2002-07-01), None
patent: 6-216096 (1994-08-01), None
patent: 10-94955 (1998-04-01), None
patent: 2000-79564 (2000-03-01), None
patent: 2000-286255 (2000-10-01), None
patent: 2000-303060 (2000-10-01), None
patent: 2000-336344 (2000-12-01), None
patent: 2002-194334 (2002-07-01), None
U.S. Appl. No. 11/071,182, filed Mar. 4, 2005, Shinmaru et al.
U.S. Appl. No. 11/088,788, filed Mar. 25, 2005, Kamiya et al.
Hayashi Atsushi
Kamiya Hiroyuki
Shinmaru Sachie
Tsugita Katsuyuki
Asahi Glass Company Limited
Jr. Carl Whitehead
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Rodgers Colleen E.
Seimi Chemical Co. Ltd.
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