Polishing composition and method utilizing abrasive...

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

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Details

C438S691000, C438S692000, C438S693000, C051S307000, C051S308000

Reexamination Certificate

active

07994057

ABSTRACT:
The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier, a cationic polymer, an acid, and abrasive particles that have been treated with an aminosilane compound.

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