Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2011-08-09
2011-08-09
Deo, Duy-Vu N (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S691000, C438S692000, C438S693000, C051S307000, C051S308000
Reexamination Certificate
active
07994057
ABSTRACT:
The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier, a cationic polymer, an acid, and abrasive particles that have been treated with an aminosilane compound.
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Anjur Sriram
Dysard Jeffrey
Grumbine Steven
Ward William
White Daniela
Cabot Microelectronics Corporation
Deo Duy-Vu N
Gettel Nancy J.
Omholt Thomas E.
Weseman Steven D.
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